bcp 51 ... bcp 53 1 oct-20-1999 pnp silicon af transistors ? for af driver and output stages ? high collector current ? low collector-emitter saturation voltage ? complementary types: bcp 54 ... bcp 56 (npn) vps05163 1 2 3 4 type marking pin configuration package bcp 51 bcp 51-10 bcp 51-16 bcp 52 bcp 52-10 bcp 52-16 bcp 53 bcp 53-10 bcp 53-16 bcp 51 bcp 51-10 bcp 51-16 bcp 52 bcp 52-10 bcp 52-16 bcp 53 bcp 53-10 bcp 53-16 1 = b 1 = b 1 = b 1 = b 1 = b 1 = b 1 = b 1 = b 1 = b 2 = c 2 = c 2 = c 2 = c 2 = c 2 = c 2 = c 2 = c 2 = c 3 = e 3 = e 3 = e 3 = e 3 = e 3 = e 3 = e 3 = e 3 = e 4 = c 4 = c 4 = c 4 = c 4 = c 4 = c 4 = c 4 = c 4 = c sot-223 sot-223 sot-223 sot-223 sot-223 sot-223 sot-223 sot-223 sot-223
bcp 51 ... bcp 53 2 oct-20-1999 maximum ratings parameter symbol bcp 51 unit bcp 53 bcp 52 60 collector-emitter voltage 80 45 v ceo v collector-emitter voltage r be 1k ? v cer 45 60 100 collector-base voltage v cbo 45 60 100 emitter-base voltage v ebo 5 5 5 a dc collector current 1 i c peak collector current 1.5 i cm base current i b ma 100 i bm peak base current 200 w total power dissipation , t s = 124 c p tot 1.5 junction temperature t j 150 c storage temperature t st g -65 ... 150 thermal resistance junction ambient 1) r thja 72 k/w junction - soldering point r thjs 17 1) package mounted on pcb 40mm x 40mm x 1.5mm / 6cm 2 cu
bcp 51 ... bcp 53 3 oct-20-1999 electrical characteristics at t a = 25c, unless otherwise specified. parameter symbol values unit min. typ. max. dc characteristics v - - - - - - collector-emitter breakdown voltage i c = 10 ma, i b = 0 v (br)ceo bcp 51 bcp 52 bcp 53 45 60 80 - - - v (br)cbo - - - 45 60 100 bcp 51 bcp 52 bcp 53 collector-base breakdown voltage i c = 100 a, i b = 0 - 5 v (br)ebo emitter-base breakdown voltage i e = 10 a, i c = 0 - - collector cutoff current v cb = 30 v, i e = 0 i cbo - na 100 i cbo 20 - collector cutoff current v cb = 30 v, i e = 0 , t a = 150 c - a 25 - - - h fe dc current gain 1) i c = 5 ma, v ce = 2 v - dc current gain 1) i c = 150 ma, v ce = 2 v - 100 160 250 160 250 40 63 100 h fe bcp51...53 hfe-grp. 10 hfe-grp. 16 - 25 - h fe dc current gain 1) i c = 500 ma, v ce = 2 v - - collector-emitter saturation voltage1) i c = 500 ma, i b = 50 ma v cesat - 0.5 v base-emitter voltage 1) i c = 500 ma, v ce = 2 v v be(on) - - 1 ac characteristics transition frequency i c = 50 ma, v ce = 10 v, f = 100 mhz f t - 125 - mhz 1) pulse test: t 300 s, d = 2%
bcp 51 ... bcp 53 4 oct-20-1999 total power dissipation p tot = f ( t a *; t s ) * package mounted on epoxy 0 0.4 0 50 100 150 bcp 51...53 ehp00259 ?c 0.6 0.2 t a s t 0.8 1.0 1.2 1.4 w 1.6 p tot t t ; as transition frequency f t = f ( i c ) v ce = 10v 10 ehp00260 bcp 51...53 03 10 ma 1 10 3 10 5 5 10 1 10 2 10 2 c t f mhz collector cutoff current i cbo = f ( t a ) v cb = 30v 0 10 ehp00262 bcp 51...53 a t 150 -1 4 10 cbo na 50 100 0 10 1 10 3 10 c 10 2 max typ dc current gain h fe = f ( i c ) vce = 2v 10 ehp00261 bcp 51...53 04 10 ma 0 10 3 10 5 5 10 1 10 2 10 1 c fe h 3 10 2 10 c 100 5 25 c -50 c
bcp 51 ... bcp 53 5 oct-20-1999 collector-emitter saturation voltage i c = f ( v cesat ), h fe = 10 0 10 ehp00264 bcp 51...53 cesat v 0.4 v 0.8 0 10 1 10 2 4 10 5 5 c ma 5 3 10 0.2 0.6 c 100 25 c c -50 base-emitter saturation voltage i c = f ( v besat ), h fe = 10 0 10 ehp00263 bcp 51...53 besat v 0 4 10 c ma 0.2 1 10 2 10 3 10 0.4 0.6 0.8 1.2 v c 100 25 c -50 c permissible pulse load p totmax / p totdc = f ( t p ) 10 ehp00265 bcp 51...53 -6 -5 10 0 10 s 0 10 2 10 5 5 10 -4 10 -3 10 -2 10 1 5 d = 0.005 0.01 0.02 0.05 0.1 0.2 0.5 0 tot max tot p dc p p t t p = d t t p t
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